Transconductance and Coulomb Blockade Properties of In-Plane Grown Carbon Nanotube Field Effect Transistors
نویسندگان
چکیده
Nan Ai1, Onejae Sul2, Milan Begliarbekov1, Qiang Song1, Kitu Kumar2, Daniel S. Choi3, Eui-Hyeok Yang2, and Stefan Strauf1 ∗ 1Department of Physics and Engineering Physics, Stevens Institute of Technology Castle Point on the Hudson, Hoboken, NJ 07030, USA 2Department of Mechanical Engineering, Stevens Institute of Technology Castle Point on the Hudson, Hoboken, NJ 07030, USA 3Department of Materials Science and Engineeri , University of Idaho 875 Perimeter Dr., Moscow, ID 83844, USA
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